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Typical Performance Characteristics
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
175 C
400
100
V GS = 15.0V
10.0V
8.0V
7.0V
6.5V
6.0V
5.5V
400
100
*Notes:
1. V DS = 10V
2. 250 μ s Pulse Test
o
25 C
-55 C
5.0V
10
o
o
*Notes:
2. T C = 25 C
10
7
0.1
1. 250 μ s Pulse Test
o
1
3
1
2
3 4 5
6
175 C
25 C
V DS , Drain-Source Voltage[V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
10
8
V GS = 10V
V GS , Gate-Source Voltage[V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
400
100
o
o
6
V GS = 20V
10
*Notes:
*Note: T C = 25 C
4
0
100 200 300 400
o
1
0.0
1. V GS = 0V
2. 250 μ s Pulse Test
0.5 1.0
1.5
I D , Drain Current [A]
Figure 5. Capacitance Characteristics
10000
V SD , Body Diode Forward Voltage [V]
Figure 6. Gate Charge Characteristics
10
1000
C iss
C oss
8
6
V DS = 30V
V DS = 75V
V DS = 120V
100
*Note:
1. V GS = 0V
2. f = 1MHz
4
Ciss = Cgs + Cgd ( Cds = shorted )
Coss = Cds + Cgd
C rss
2
10
0.1
Crss = Cgd
1 10
V DS , Drain-Source Voltage [V]
100 200
0
0
*Note: I D = 100A
30 60
Q g , Total Gate Charge [nC]
90
?2011 Fairchild Semiconductor Corporation
FDP075N15A / FDB075N15A Rev. C4
3
www.fairchildsemi.com
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